Hynix H5TQ2G43BFR-H9 256Mb Mobile DDR DRAM Chip from Mexico
Low-power 256 megabit mobile DDR DRAM integrated circuit optimized for smartphones and tablets. It qualifies for HTS 8542.32.0024 as a dynamic read-write random access memory in the 128-256 megabit range. Enables efficient multitasking in portable devices.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Label shipments clearly as 'DRAM ICs 256Mb' and include HTS-specific capacity certification
• Test for counterfeit chips; U.S
• Customs requires authenticity verification for high-value electronics
• Consider bonded warehouse entry for re-export to minimize duties on intermediate goods