Hynix H5TQ2G43BFR-H9 256Mb Mobile DDR DRAM Chip from China
Low-power 256 megabit mobile DDR DRAM integrated circuit optimized for smartphones and tablets. It qualifies for HTS 8542.32.0024 as a dynamic read-write random access memory in the 128-256 megabit range. Enables efficient multitasking in portable devices.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Label shipments clearly as 'DRAM ICs 256Mb' and include HTS-specific capacity certification
• Test for counterfeit chips; U.S
• Customs requires authenticity verification for high-value electronics
• Consider bonded warehouse entry for re-export to minimize duties on intermediate goods