Solar-Blind UV Phototransistor GaN from China
Gallium Nitride (GaN) phototransistor inherently solar-blind (220-280nm UVC/UVB) for flame detection and missile warning systems. Advanced material photosensitive transistor under HTS 8541.49.70.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• GaN material composition certification required; silicon devices can't achieve solar-blind response
• ITAR/EAR export licensing likely applies for missile warning applications
• Quantum efficiency data (>30% at 260nm) essential for material verification