Solar-Blind UV Phototransistor GaN
Gallium Nitride (GaN) phototransistor inherently solar-blind (220-280nm UVC/UVB) for flame detection and missile warning systems. Advanced material photosensitive transistor under HTS 8541.49.70.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | +50.0% | 50% |
| π²π½Mexico | Free | β | Free |
| π¨π¦Canada | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If thyristors/triacs of GaN construction
Different semiconductor function (power switching vs light detection).
If aircraft/missile warning system part
Qualified as aircraft/spacecraft part with specific airworthiness certification.
If physical properties analyzer component
Part of complete laboratory gas/spectrometer analyzing instrument.
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Import Tips & Compliance
β’ GaN material composition certification required; silicon devices can't achieve solar-blind response
β’ ITAR/EAR export licensing likely applies for missile warning applications
β’ Quantum efficiency data (>30% at 260nm) essential for material verification
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