Solar-Blind UV Phototransistor GaN

Gallium Nitride (GaN) phototransistor inherently solar-blind (220-280nm UVC/UVB) for flame detection and missile warning systems. Advanced material photosensitive transistor under HTS 8541.49.70.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFree+50.0%50%
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡¨πŸ‡¦CanadaFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

More Specific Codes

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Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8541Same rate: 50%

If thyristors/triacs of GaN construction

Different semiconductor function (power switching vs light detection).

8802.60.90Lower: 35% vs 50%

If aircraft/missile warning system part

Qualified as aircraft/spacecraft part with specific airworthiness certification.

9027.50Lower: 10% vs 50%

If physical properties analyzer component

Part of complete laboratory gas/spectrometer analyzing instrument.

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Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.

Import Tips & Compliance

β€’ GaN material composition certification required; silicon devices can't achieve solar-blind response

β€’ ITAR/EAR export licensing likely applies for missile warning applications

β€’ Quantum efficiency data (>30% at 260nm) essential for material verification

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