GaAs Photodiode Wafers from China
Gallium arsenide semiconductor wafers generating photocurrent from infrared light. Classified in 8541.49.10.10 as unmounted photosensitive wafers for telecom and laser detection. These full wafers are sliced into dice post-import for device fabrication.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide material composition certificates confirming GaAs substrate to avoid reclassification as silicon devices
• Declare wafer diameter and doping specs accurately; mismatches lead to CBP scrutiny
• Ensure cleanroom packaging to prevent contamination claims during inspection