Heterojunction Silicon PV Cell (HJT) from Japan
Heterojunction (HJT) photovoltaic cell combining crystalline silicon with thin amorphous silicon layers for superior passivation. Individual cell not assembled, under HTS 8541.42.00. Achieves efficiencies over 26% with low temperature coefficient.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Document amorphous-crystalline interface specs for advanced technology classification
• Transparent conductive oxide (TCO) layer composition affects valuation
• Low-temperature processing claims require supporting manufacturing data