Heterojunction Silicon PV Cell (HJT) from China
Heterojunction (HJT) photovoltaic cell combining crystalline silicon with thin amorphous silicon layers for superior passivation. Individual cell not assembled, under HTS 8541.42.00. Achieves efficiencies over 26% with low temperature coefficient.
Duty Rate — China → United States
60%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.91.0250%Effective with respect to entries on or after September 27, 2024, articles the product of China, as provided for in subdivision (c) of U.S. note 31 to this subchapter
Import Tips
• Document amorphous-crystalline interface specs for advanced technology classification
• Transparent conductive oxide (TCO) layer composition affects valuation
• Low-temperature processing claims require supporting manufacturing data