mmWave SiGe Transistor for 5G Base Stations from Japan
Silicon-germanium (SiGe) transistor optimized for 28-39 GHz bands in 5G infrastructure. Classified under HTS 8541.29.00.85 for its transistor construction and ultra-high frequency capability exceeding 30 GHz. Essential for high-speed data transmission in cellular networks.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide frequency response curves in technical documentation to substantiate 30GHz+ operation
• Ensure export licenses from origin country as high-frequency devices have dual-use restrictions
• Label packages clearly as 'transistors' not 'chips' to prevent 8542 misclassification