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8541.29.00.85/GaN High-Frequency Power Transistor/Japan

GaN High-Frequency Power Transistor from Japan

A gallium nitride (GaN) based transistor designed for operation at frequencies exceeding 30,000 MHz, used in radar systems and satellite communications. It falls under HTS 8541.29.00.85 due to its transistor function and high operating frequency specification in the subheading. These devices provide high power output and efficiency at millimeter-wave bands.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• Verify operating frequency certification exceeds 30,000 MHz with test data to confirm classification under 8541.29.00.85

• Include RoHS compliance documentation as these semiconductors are subject to environmental import regulations

• Avoid misclassification as general ICs (8542); specify transistor function in commercial invoices

GaN High-Frequency Power Transistor from Japan — Import Duty Rate | HTS 8541.29.00.85