GaAs pHEMT RF Transistor from Mexico
Pseudomorphic High Electron Mobility Transistor (pHEMT) on GaAs substrate for 35+ GHz operation. Classified HTS 8541.29.00.85 for high-frequency transistor characteristics. Used in wireless infrastructure and test equipment.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Document substrate material (GaAs) and epitaxy process details
• Comply with WEEE/RoHS for electronic component recycling
• Use anti-static reels for shipping to prevent electrostatic damage