GaAs pHEMT RF Transistor from Germany
Pseudomorphic High Electron Mobility Transistor (pHEMT) on GaAs substrate for 35+ GHz operation. Classified HTS 8541.29.00.85 for high-frequency transistor characteristics. Used in wireless infrastructure and test equipment.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Document substrate material (GaAs) and epitaxy process details
• Comply with WEEE/RoHS for electronic component recycling
• Use anti-static reels for shipping to prevent electrostatic damage