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8541.29.00.85/GaAs pHEMT RF Transistor/Canada

GaAs pHEMT RF Transistor from Canada

Pseudomorphic High Electron Mobility Transistor (pHEMT) on GaAs substrate for 35+ GHz operation. Classified HTS 8541.29.00.85 for high-frequency transistor characteristics. Used in wireless infrastructure and test equipment.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• Document substrate material (GaAs) and epitaxy process details

• Comply with WEEE/RoHS for electronic component recycling

• Use anti-static reels for shipping to prevent electrostatic damage

GaAs pHEMT RF Transistor from Canada — Import Duty Rate | HTS 8541.29.00.85