Silicon Germanium HBT Wafer from Japan
SiGe Heterojunction Bipolar Transistor wafer for high-speed analog ICs in telecom handsets. Unmounted chips under HTS 8541.29.00.40 as non-photosensitive transistors. Enables low-noise amplification at mmWave frequencies.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Specify Ge content percentage (20-50%) critical for duty assessment
• Avoid valuation based on downstream IC price; use fab cost sheets