8541.29.00.40/Silicon Germanium HBT Wafer/Germany

Silicon Germanium HBT Wafer from Germany

SiGe Heterojunction Bipolar Transistor wafer for high-speed analog ICs in telecom handsets. Unmounted chips under HTS 8541.29.00.40 as non-photosensitive transistors. Enables low-noise amplification at mmWave frequencies.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Specify Ge content percentage (20-50%) critical for duty assessment

• Avoid valuation based on downstream IC price; use fab cost sheets