Silicon Germanium HBT Wafer from China
SiGe Heterojunction Bipolar Transistor wafer for high-speed analog ICs in telecom handsets. Unmounted chips under HTS 8541.29.00.40 as non-photosensitive transistors. Enables low-noise amplification at mmWave frequencies.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Specify Ge content percentage (20-50%) critical for duty assessment
• Avoid valuation based on downstream IC price; use fab cost sheets