8541.29.00.40/SiC Power Transistor Wafer/Japan

SiC Power Transistor Wafer from Japan

4-inch silicon carbide (SiC) wafer with power MOSFET transistor cells for high-voltage applications like solar inverters. Unmounted status qualifies under HTS 8541.29.00.40 for transistor wafers. Superior thermal performance over silicon for harsh environments.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Specify crystal orientation (4H-SiC) and polytype in import docs