SiC Small Signal Transistor from Japan
Silicon Carbide (SiC) NPN transistor for high-temperature switching applications up to 225°C with <1W dissipation. HTS 8541.21.00.95 applies to low-power wide bandgap semiconductors. Used in automotive electronics and harsh environments.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• SiC material composition certification prevents silicon transistor misclassification
• High voltage ratings (despite low power) require avalanche specs documentation
• Automotive grade (AEC-Q101) qualification documents essential