S8050 NPN Medium Power RF Transistor
S8050 NPN transistor supports RF switching and amplification up to 150 MHz with dissipation under 1W, used in wireless modules. Classified in HTS 8541.21.00.75 for its high-frequency, low-dissipation specs.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If mounted on semiconductor leads or leads assemblies
Lead-mounted semiconductors classified as electrical apparatus parts.
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Import Tips & Compliance
• Include Bill of Materials (BOM) showing transistor integration
• Comply with BIS export controls if dual-use technology
• Differentiate from power transistors to avoid 8541.29 duties
Related Products under HTS 8541.21.00.75
2N3904 NPN RF Transistor
The 2N3904 is a general-purpose NPN silicon transistor commonly used in RF amplification and switching circuits, with an operating frequency exceeding 100 MHz and dissipation rate under 1W. It falls under HTS 8541.21.00.75 due to its transistor function, low power dissipation, and high-frequency capability for applications like FM radios and wireless devices.
J310 N-Channel JFET RF Transistor
J310 is an N-channel JFET transistor optimized for RF preamplifiers and converters, with frequency response over 100 MHz and low dissipation under 1W. It matches HTS 8541.21.00.75 as a high-frequency, low-power discrete transistor.
2SC945 NPN Silicon RF Transistor
The 2SC945 NPN transistor is used in FM/AM radio IF amplifiers and oscillators, supporting frequencies above 100 MHz with dissipation below 1W. HTS 8541.21.00.75 applies to its high-frequency transistor profile.
BF199 UHF Silicon NPN Transistor
The BF199 is a silicon NPN transistor designed for UHF applications like TV tuners and RF amplifiers, operating above 100 MHz with dissipation less than 1W. Classified under HTS 8541.21.00.75 for its high-frequency transistor characteristics in consumer electronics.
MPSH10 NPN Silicon High-Frequency Transistor
MPSH10 is a high-frequency NPN silicon transistor for VHF/UHF applications in scanners and receivers, with fT over 100 MHz and dissipation <1W. Fits HTS 8541.21.00.75 for RF-capable discrete semiconductors.