SiGe HBT Transistor Die from Japan
Silicon-Germanium Heterojunction Bipolar Transistor dice for high-frequency applications in 5G base stations, unmounted with <1W dissipation. Classified under HTS 8541.21.00.40 as non-photosensitive transistor chips.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide cutoff frequency (fT) data confirming transistor characteristics
• Dual-use technology - ensure proper export license classification
• Use waffle pack carriers with exact quantity declaration