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8541.21.00.40/SiGe HBT Transistor Die/Germany

SiGe HBT Transistor Die from Germany

Silicon-Germanium Heterojunction Bipolar Transistor dice for high-frequency applications in 5G base stations, unmounted with <1W dissipation. Classified under HTS 8541.21.00.40 as non-photosensitive transistor chips.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• Provide cutoff frequency (fT) data confirming transistor characteristics

• Dual-use technology - ensure proper export license classification

• Use waffle pack carriers with exact quantity declaration

SiGe HBT Transistor Die from Germany — Import Duty Rate | HTS 8541.21.00.40