SiGe HBT Transistor Die from China
Silicon-Germanium Heterojunction Bipolar Transistor dice for high-frequency applications in 5G base stations, unmounted with <1W dissipation. Classified under HTS 8541.21.00.40 as non-photosensitive transistor chips.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Provide cutoff frequency (fT) data confirming transistor characteristics
• Dual-use technology - ensure proper export license classification
• Use waffle pack carriers with exact quantity declaration