GaN Microwave Schottky Diode from China
A gallium nitride (GaN) Schottky diode designed for microwave frequencies above 1 GHz, used in radar systems and satellite communications. It falls under HTS 8541.10.00.60 as a non-photosensitive, non-LED diode specifically for microwave applications. These diodes provide low forward voltage drop and high switching speeds essential for high-frequency signal processing.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Verify frequency specs (>1 GHz) via manufacturer datasheet to confirm microwave classification under 8541.10.00.60
• Include RoHS compliance certification and test reports for customs clearance to avoid delays
• Declare exact GaN composition; mislabeling as silicon can lead to reclassification and penalties