Plasma Etching Reactor from Japan
Plasma etching reactors anisotropically remove material from semiconductor wafers using reactive ion etching for circuit definition. Under HTS 8486.20.00.00 as core semiconductor device processing apparatus. Provides precise pattern transfer.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Specify etch rate/uniformity data; ensure vacuum chamber certifications; handle gas cylinder safety docs