Ion Implantation System from China
High-energy ion implanters dope semiconductor wafers with precise impurity concentrations for transistor formation in ICs. Classified HTS 8486.20.00.00 for semiconductor device manufacture. Controls dopant depth/profile accurately.
Duty Rate — China → United States
25%
Rate breakdown
9903.88.0225%Except as provided in headings 9903.88.12, 9903.88.17, 9903.88.20, 9903.88.54, 9903.88.59, 9903.88.61, 9903.88.63, 9903.88.66, 9903.88.67, 9903.88.68, 9903.88.69, or 9903.88.70, articles the product of China, as provided for in U.S. note 20(c) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(d)
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide implant energy/dose specs; radiation safety certifications required; vacuum system documentation essential