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8481.80.90.20/Proportional Exhaust Valve for Semiconductor Plasma Chamber/Mexico

Proportional Exhaust Valve for Semiconductor Plasma Chamber from Mexico

Throttle valve proportionally controls exhaust pressure in plasma etching/reactive ion etching chambers based on ion gauge signals from vacuum controllers. Designed for 8481.80.9020 as signal-proportional control valve for semiconductor device processing apparatus. Maintains stable plasma density during wafer pattern transfer.

Duty Rate — Mexico → United States

12%

Rate breakdown

9903.05.5510%Section 301 (forced labor) — additional 10% ad valorem on products of Mexico
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Import Tips

• Vacuum conductance curves must accompany entries for classification verification

• RF plasma compatibility certification prevents electrical interference rejections

Proportional Exhaust Valve for Semiconductor Plasma Chamber from Mexico — Import Duty Rate | HTS 8481.80.90.20