Proportional Exhaust Valve for Semiconductor Plasma Chamber from Germany
Throttle valve proportionally controls exhaust pressure in plasma etching/reactive ion etching chambers based on ion gauge signals from vacuum controllers. Designed for 8481.80.9020 as signal-proportional control valve for semiconductor device processing apparatus. Maintains stable plasma density during wafer pattern transfer.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Section 301 (forced labor) — European Union member state (col1 rate < 10 percent): MFN < 10% → total duty capped at 10%
Import Tips
• Vacuum conductance curves must accompany entries for classification verification
• RF plasma compatibility certification prevents electrical interference rejections