Proportional Exhaust Valve for Semiconductor Plasma Chamber from Germany
Throttle valve proportionally controls exhaust pressure in plasma etching/reactive ion etching chambers based on ion gauge signals from vacuum controllers. Designed for 8481.80.9020 as signal-proportional control valve for semiconductor device processing apparatus. Maintains stable plasma density during wafer pattern transfer.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.97, articles the product of a member state of the European Union, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 10 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Vacuum conductance curves must accompany entries for classification verification
• RF plasma compatibility certification prevents electrical interference rejections