Proportional Exhaust Valve for Semiconductor Plasma Chamber from Canada
Throttle valve proportionally controls exhaust pressure in plasma etching/reactive ion etching chambers based on ion gauge signals from vacuum controllers. Designed for 8481.80.9020 as signal-proportional control valve for semiconductor device processing apparatus. Maintains stable plasma density during wafer pattern transfer.
Duty Rate — Canada → United States
12%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Vacuum conductance curves must accompany entries for classification verification
• RF plasma compatibility certification prevents electrical interference rejections