SiC Wafer Growth Mold from Mexico

Mold for silicon carbide (SiC) crystal growth used in power semiconductor wafers. HTS 8480.49.0090 covers metal carbide molds for semiconductor materials processing.

Duty Rate — Mexico → United States

13.1%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter

Import Tips

Document high-temperature capability (>2000°C)

Specify sublimation growth process (PVT method)

SiC molds require special high-purity certifications