SiC Wafer Growth Mold from Japan
Mold for silicon carbide (SiC) crystal growth used in power semiconductor wafers. HTS 8480.49.0090 covers metal carbide molds for semiconductor materials processing.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Document high-temperature capability (>2000°C)
• Specify sublimation growth process (PVT method)
• SiC molds require special high-purity certifications