SiC Wafer Growth Mold from Japan
Mold for silicon carbide (SiC) crystal growth used in power semiconductor wafers. HTS 8480.49.0090 covers metal carbide molds for semiconductor materials processing.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Document high-temperature capability (>2000°C)
• Specify sublimation growth process (PVT method)
• SiC molds require special high-purity certifications