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SiC Wafer Growth Mold from Japan

Mold for silicon carbide (SiC) crystal growth used in power semiconductor wafers. HTS 8480.49.0090 covers metal carbide molds for semiconductor materials processing.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

Import Tips

Document high-temperature capability (>2000°C)

Specify sublimation growth process (PVT method)

SiC molds require special high-purity certifications

SiC Wafer Growth Mold from Japan — Import Duty Rate | HTS 8480.49.00.90