SiC Wafer Growth Mold from China
Mold for silicon carbide (SiC) crystal growth used in power semiconductor wafers. HTS 8480.49.0090 covers metal carbide molds for semiconductor materials processing.
Duty Rate — China → United States
40.6%
Rate breakdown
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
9903.05.3112.5%Section 301 (forced labor) — additional 12.5% ad valorem on products of China
Import Tips
• Document high-temperature capability (>2000°C)
• Specify sublimation growth process (PVT method)
• SiC molds require special high-purity certifications