8479.90.95.96/Float Zone Crystal Grower/Japan

Float Zone Crystal Grower from Japan

Float zone crystal growers employ the float zone method to produce high-purity monocrystalline semiconductor boules by zone melting without a crucible. Classified under HTS 8479.90.95.96 as semiconductor wafer manufacturing equipment part for crystal growth processes.

Duty Rate — Japan → United States

10%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
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Import Tips

• Include process diagrams showing zone melting technique to substantiate semiconductor-specific classification

• Ensure labeling specifies 'for silicon/gallium arsenide monocrystalline growth' to prevent bulk machinery misclassification

• Watch for reclassification if equipment lacks RF heating coil specific to float zone method

Float Zone Crystal Grower from Japan — Import Duty Rate | HTS 8479.90.95.96