Float Zone Crystal Grower from Japan
Equipment employing the float zone method to purify and grow monocrystalline semiconductor boules by melting a narrow zone of polycrystalline rod with RF heating. Falls under HTS 8479.89.95.99 for wafer manufacturing in semiconductor processing. Used for high-purity silicon without crucible contamination.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Declare RF coil specifications and zone melting parameters to distinguish from standard melting furnaces
• Obtain advance ruling from CBP on classification, as float zone tech blurs lines with 8486 furnaces