Float Zone Crystal Grower from Japan
Equipment that uses the float zone method to purify and grow semiconductor crystals by melting a narrow zone of polycrystalline silicon with RF heating while moving it along the rod. Classified under HTS 8479.82.00 for its stirring and homogenizing action in zone refining to achieve ultra-pure monocrystalline silicon.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Include process flow diagrams showing zone melting and homogenization to justify 8479 classification over furnace equipment
• Ensure labeling specifies semiconductor-grade purity levels to prevent misclassification as general lab apparatus