8479.82.00/Float Zone Crystal Grower/Japan

Float Zone Crystal Grower from Japan

Equipment that uses the float zone method to purify and grow semiconductor crystals by melting a narrow zone of polycrystalline silicon with RF heating while moving it along the rod. Classified under HTS 8479.82.00 for its stirring and homogenizing action in zone refining to achieve ultra-pure monocrystalline silicon.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

Calculate with your customs value Verify classification with AI

Import Tips

• Include process flow diagrams showing zone melting and homogenization to justify 8479 classification over furnace equipment

• Ensure labeling specifies semiconductor-grade purity levels to prevent misclassification as general lab apparatus