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Float Zone Crystal Grower from Japan

Equipment employing the float zone method to refine and grow high-purity silicon crystals by melting a narrow zone of polycrystalline rod without a crucible. Classified in 8479.82.0080 for semiconductor-specific grinding and homogenization processes.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter

Import Tips

• Provide float zone RF heating specs and silicon resistivity documentation for proper statistical note application

• Label as 'semiconductor crystal grower' to distinguish from general melting equipment

Float Zone Crystal Grower from Japan — Import Duty Rate | HTS 8479.82.00.80