Silicon Carbide Wafer Lapper from Mexico
Lapping machine for SiC wafers used in power semiconductors, achieving sub-micron flatness for epitaxial growth. HTS 8464.20.0120 for grinding/polishing silicon carbide, a ceramic mineral material. Essential for high-voltage power device manufacturing.
Duty Rate — Mexico → United States
12%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Declare SiC-specific tooling and slurries; provide epitaxial readiness specifications; consider USMCA preferences for North American assembly