Silicon Carbide Wafer Lapper from Japan
Lapping machine for SiC wafers used in power semiconductors, achieving sub-micron flatness for epitaxial growth. HTS 8464.20.0120 for grinding/polishing silicon carbide, a ceramic mineral material. Essential for high-voltage power device manufacturing.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Declare SiC-specific tooling and slurries; provide epitaxial readiness specifications; consider USMCA preferences for North American assembly