8464.20.01.20/Silicon Carbide Wafer Lapper/Japan

Silicon Carbide Wafer Lapper from Japan

Lapping machine for SiC wafers used in power semiconductors, achieving sub-micron flatness for epitaxial growth. HTS 8464.20.0120 for grinding/polishing silicon carbide, a ceramic mineral material. Essential for high-voltage power device manufacturing.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Declare SiC-specific tooling and slurries; provide epitaxial readiness specifications; consider USMCA preferences for North American assembly