Ionic Beam Etching Tool from Mexico
Uses focused ionic beams (charged particle streams with photon assist) for anisotropic etching of semiconductor surfaces during device fabrication. HTS 8456.12.90.00 covers other light/photon beam processes including ionic variants for material removal. Key for gate formation in advanced nodes.
Duty Rate — Mexico → United States
12.4%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Clarify ionic vs pure electron/ion beam; photon component justifies this heading over plasma arc
• Include vacuum chamber specs and throughput data for valuation