Ionic Beam Etching Tool from Japan
Uses focused ionic beams (charged particle streams with photon assist) for anisotropic etching of semiconductor surfaces during device fabrication. HTS 8456.12.90.00 covers other light/photon beam processes including ionic variants for material removal. Key for gate formation in advanced nodes.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Clarify ionic vs pure electron/ion beam; photon component justifies this heading over plasma arc
• Include vacuum chamber specs and throughput data for valuation