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Ionic Beam Etching Tool from Japan

Uses focused ionic beams (charged particle streams with photon assist) for anisotropic etching of semiconductor surfaces during device fabrication. HTS 8456.12.90.00 covers other light/photon beam processes including ionic variants for material removal. Key for gate formation in advanced nodes.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

Import Tips

Clarify ionic vs pure electron/ion beam; photon component justifies this heading over plasma arc

Include vacuum chamber specs and throughput data for valuation