Ionic Beam Etching Tool from China
Uses focused ionic beams (charged particle streams with photon assist) for anisotropic etching of semiconductor surfaces during device fabrication. HTS 8456.12.90.00 covers other light/photon beam processes including ionic variants for material removal. Key for gate formation in advanced nodes.
Duty Rate — China → United States
37.4%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Clarify ionic vs pure electron/ion beam; photon component justifies this heading over plasma arc
• Include vacuum chamber specs and throughput data for valuation