Float Zone Crystal Furnace from Japan
Float zone crystal furnaces use the float zone method to produce high-purity monocrystalline semiconductor boules without crucibles, ideal for silicon and gallium arsenide. The apparatus melts and recrystallizes a narrow zone along the boule. Falls under HTS 8442.30.0150 as other equipment for preparing printing components, with application to semiconductor wafer precursors.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Include process flow diagrams showing float zone method to distinguish from Czochralski pullers during customs review
• Declare RF power supply components separately if modular to prevent overvaluation
• Comply with vacuum system certifications for high-purity inert gas operations