Float Zone Crystal Furnace from Japan
Float zone crystal furnaces use the float zone method to produce high-purity monocrystalline semiconductor boules without crucibles, ideal for silicon and gallium arsenide. The apparatus melts and recrystallizes a narrow zone along the boule. Falls under HTS 8442.30.0150 as other equipment for preparing printing components, with application to semiconductor wafer precursors.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Include process flow diagrams showing float zone method to distinguish from Czochralski pullers during customs review
• Declare RF power supply components separately if modular to prevent overvaluation
• Comply with vacuum system certifications for high-purity inert gas operations