Float Zone Crystal Furnace from China
Float zone crystal furnaces use the float zone method to produce high-purity monocrystalline semiconductor boules without crucibles, ideal for silicon and gallium arsenide. The apparatus melts and recrystallizes a narrow zone along the boule. Falls under HTS 8442.30.0150 as other equipment for preparing printing components, with application to semiconductor wafer precursors.
Duty Rate — China → United States
35%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Include process flow diagrams showing float zone method to distinguish from Czochralski pullers during customs review
• Declare RF power supply components separately if modular to prevent overvaluation
• Comply with vacuum system certifications for high-purity inert gas operations