8419.90.50.80/Float Zone Silicon Crystal Grower/Japan

Float Zone Silicon Crystal Grower from Japan

Float zone furnace apparatus for producing ultra-pure silicon crystals by zone melting, heating a narrow zone of polycrystalline silicon rod to melt and recrystallize. Used in semiconductor industry for high-resistivity wafers. Falls under 8419.90.50.80 for parts of temperature-treatment equipment in semiconductor processing.

Duty Rate — Japan → United States

10%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
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Import Tips

• Declare exact zone melting parameters and purity specs; include fab end-use statement; watch for dual-use export licensing under ECCN 3B001

Float Zone Silicon Crystal Grower from Japan — Import Duty Rate | HTS 8419.90.50.80