</>Build with Tariff Intelligence|Programmatic access to tariff calculations and HS code classification.Explore Developer Resources →

Plasma Etch Chamber Heat Exchanger Manifold from Japan

Multi-channel heat exchanger manifold for plasma etch chambers, recovering heat from exhaust gases in semiconductor wafer patterning equipment. Under HTS 8419.90.30.00 for heat exchange components in temperature-controlled etching machinery. Supports high-throughput RIE processes with thermal management.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

Import Tips

Document plasma compatibility (e.g

Teflon-lined for fluorinated chemistries); provide etch rate correlations

Avoid: incomplete hazardous material declarations for chamber residues