Plasma Etch Chamber Heat Exchanger Manifold from China

Multi-channel heat exchanger manifold for plasma etch chambers, recovering heat from exhaust gases in semiconductor wafer patterning equipment. Under HTS 8419.90.30.00 for heat exchange components in temperature-controlled etching machinery. Supports high-throughput RIE processes with thermal management.

Duty Rate — China → United States

35%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]

Import Tips

Document plasma compatibility (e.g

Teflon-lined for fluorinated chemistries); provide etch rate correlations

Avoid: incomplete hazardous material declarations for chamber residues