Epitaxial Reactor Temperature Controller from Japan
Multi-zone temperature control systems for epitaxial reactors maintain precise gradients (e.g., 1000-1200°C) across susceptors during thin film deposition on semiconductor wafers. Critical for layer thickness uniformity. HTS 8419.89.95 for temperature treatment equipment.
Duty Rate — Japan → United States
14.2%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Provide zone temperature profiles and wafer size specs for classification
• Distinguish from general industrial heaters under 8516
• Technical literature showing MOCVD/MBE integration essential