Epitaxial Reactor Temperature Controller from Japan
Multi-zone temperature control systems for epitaxial reactors maintain precise gradients (e.g., 1000-1200°C) across susceptors during thin film deposition on semiconductor wafers. Critical for layer thickness uniformity. HTS 8419.89.95 for temperature treatment equipment.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Provide zone temperature profiles and wafer size specs for classification
• Distinguish from general industrial heaters under 8516
• Technical literature showing MOCVD/MBE integration essential