8419.89.95.85/Thermal Oxidation Furnace for Wafers/Mexico

Thermal Oxidation Furnace for Wafers from Mexico

Horizontal tube furnace for growing silicon dioxide layers on semiconductor wafers through high-temperature steam or dry oxygen ambient. HTS 8419.89.95.85 for other material wafer processing involving precise temperature change processes.

Duty Rate — Mexico → United States

14.2%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
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Import Tips

• Specify oxidation temperatures (800-1200°C) and ramp rates for gate oxide processes

• Boat/wafer carrier capacity documentation essential

• General tube furnaces classify under 8514.30 without semiconductor specs

Thermal Oxidation Furnace for Wafers from Mexico — Import Duty Rate | HTS 8419.89.95.85