Thermal Oxidation Furnace for Wafers from Germany
Horizontal tube furnace for growing silicon dioxide layers on semiconductor wafers through high-temperature steam or dry oxygen ambient. HTS 8419.89.95.85 for other material wafer processing involving precise temperature change processes.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.97, articles the product of a member state of the European Union, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 10 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Specify oxidation temperatures (800-1200°C) and ramp rates for gate oxide processes
• Boat/wafer carrier capacity documentation essential
• General tube furnaces classify under 8514.30 without semiconductor specs