Thermal Oxidation Furnace for Wafers from Germany
Horizontal tube furnace for growing silicon dioxide layers on semiconductor wafers through high-temperature steam or dry oxygen ambient. HTS 8419.89.95.85 for other material wafer processing involving precise temperature change processes.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Section 301 (forced labor) — European Union member state (col1 rate < 10 percent): MFN < 10% → total duty capped at 10%
Import Tips
• Specify oxidation temperatures (800-1200°C) and ramp rates for gate oxide processes
• Boat/wafer carrier capacity documentation essential
• General tube furnaces classify under 8514.30 without semiconductor specs