Thermal Oxidation Furnace for Wafers from China
Horizontal tube furnace for growing silicon dioxide layers on semiconductor wafers through high-temperature steam or dry oxygen ambient. HTS 8419.89.95.85 for other material wafer processing involving precise temperature change processes.
Duty Rate — China → United States
41.7%
Rate breakdown
9903.88.0225%Except as provided in headings 9903.88.12, 9903.88.17, 9903.88.20, 9903.88.54, 9903.88.59, 9903.88.61, 9903.88.63, 9903.88.66, 9903.88.67, 9903.88.68, 9903.88.69, or 9903.88.70, articles the product of China, as provided for in U.S. note 20(c) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(d)
9903.05.3112.5%Section 301 (forced labor) — additional 12.5% ad valorem on products of China
Import Tips
• Specify oxidation temperatures (800-1200°C) and ramp rates for gate oxide processes
• Boat/wafer carrier capacity documentation essential
• General tube furnaces classify under 8514.30 without semiconductor specs