Float Zone Crystal Grower from Japan
Equipment employing the float zone method to produce high-purity monocrystalline semiconductor boules through localized melting and resolidification zones. Classified under HTS 8419.89.95.85 for its heating and cooling processes on 'other materials' like silicon or gallium arsenide in semiconductor production.
Duty Rate — Japan → United States
14.2%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Provide process flow diagrams showing float zone RF heating to confirm classification under semiconductor statistical notes
• Ensure documentation distinguishes from general melting furnaces to prevent reclassification
• Watch for partial assemblies; complete systems may shift to 8486 if deemed semiconductor fab machines