8419.39.02/Silicon Ingot Drying Chamber/Japan

Silicon Ingot Drying Chamber from Japan

Climate-controlled chamber for drying silicon ingots after acid etch, using laminar flow heated air to remove moisture before slicing. HTS 8419.39.02 covers this industrial drying equipment for semiconductor material preparation.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Document acid etch chemistry removal efficiency

• Specify ingot dimensions supported (200-450mm diameter)

• Include cleanroom class certification (ISO 3-5)